NDB6020P

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.041 Ohms
Continuous Drain Current : 24 A


Features:

`-24 A, -20 V. R<sub>DS(ON)</sub> = 0.05 @ V<sub>GS</sub>= -4.5 V.
                        R<sub>DS(ON)</sub> = 0.07 @ V<sub>GS</sub>= -2.7 V.
                        R<sub>DS(ON)</sub> = 0.075 @ V<sub>GS</sub>= -2.5 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R<sub>DS(ON)</sub>.
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.


Specifications

Symbol	Parameter	NDP6020P	NDB6020P	Units
VDSS	Drain-Source Voltage	-20		V
VGSS	Gate-Source Voltage - Continuous	±8		V
ID	Drain Current - Continuous - Pulsed	-24		A
		-70
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	60		W
		0.4		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175

Description

These logic level P-Channel enhancement mode power field effect transistors NDB6020P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB6020P is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDB6020P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	50 mOhm @ 12A, 4.5V
Input Capacitance (Ciss) @ Vds	1590pF @ 10V
Power - Max	60W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	35nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDB6020P NDB6020P NDB6020PCT ND NDB6020PCTND NDB6020PCT