NDB6050

`48A, 50V. R<sub>DS(ON)</sub> = 0.025 @ V<sub>GS</sub>=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R<sub>DS(ON)</sub>.
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

These N-Channel enhancement mode power field effect transistors NDB6050 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB6050 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.