MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 25 A |
Resistance Drain-Source RDS (on) : | 0.022 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT |
Package / Case : | TO-263AB |
`25A, 30V. RDS(ON) = 0.022 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low RDS(ON).
`175°C maximum junction temperature rating.
Symbol |
Parameter |
NDP603AL |
NDB603AL |
Units |
VDSS | Drain-Source Voltage |
30 |
V | |
VGSS | Gate-Source Voltage - Continuous |
± 20 |
V | |
ID | Drain Current - Continuous - Pulsed |
25 (Note 1) |
A | |
100 | ||||
PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
50 |
W | |
0.4 |
W/ | |||
TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
275 |
These N-Channel logic level enhancement mode power field effect transistors NDB603AL are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDB603AL is particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Technical/Catalog Information | NDB603AL |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 25A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 1100pF @ 15V |
Power - Max | 50W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 40nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NDB603AL NDB603AL NDB603ALCT ND NDB603ALCTND NDB603ALCT |