NDB603AL

MOSFET

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SeekIC No. : 00166329 Detail

NDB603AL: MOSFET

floor Price/Ceiling Price

Part Number:
NDB603AL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.022 Ohms
Package / Case : TO-263AB


Features:

`25A, 30V. RDS(ON) = 0.022 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low RDS(ON).
`175°C maximum junction temperature rating.




Specifications

Symbol
Parameter
NDP603AL
NDB603AL
Units
VDSS Drain-Source Voltage
30
V
VGSS Gate-Source Voltage - Continuous
± 20
V
ID Drain Current - Continuous
- Pulsed
25 (Note 1)
A
100
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
50
W
0.4
W/
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275



Description

These N-Channel logic level enhancement mode power field effect transistors NDB603AL are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDB603AL is particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDB603AL
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs22 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 15V
Power - Max50W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NDB603AL
NDB603AL
NDB603ALCT ND
NDB603ALCTND
NDB603ALCT



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