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NDB508BE

Features: `19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design ...

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NDB508BE: Features: `19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Ze...

NDB508BE Data Sheet

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Part Number:
NDB508BE
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Specifications

Symbol
 Parameter
NDP508A NDP508AE
NDB508A NDB508AE
NDP508B NDP508BE
NDB508B NDB508BE
Units
VDSS
 Drain-Source Voltage
80
V
VDGR
 Drain-Gate Voltage (RGS 1 M)
80
V
VGSS
 Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID
 Drain Current - Continuous
- Pulsed
19
17
A
57
51
PD
 Total Power Dissipation
Derate above 25°C
75
W
0.5
W/
TJ,TSTG
 Operating and Storage Temperature Range
-65 to 175
TL
 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275



Description

These N-channel enhancement mode power field effect transistors NDB508BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB508BE is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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