NDB5060L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.042 Ohms
Continuous Drain Current : 26 A
Package / Case : TO-263AB


Features:

`26 A, 60 V. R<sub>DS(ON)</sub> = 0.05 @ V<sub>GS</sub>= 5 V
                     R<sub>DS(ON)</sub> = 0.035 @ V<sub>GS</sub>= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R<sub>DS(ON)</sub>.
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.


Specifications

Symbol	Parameter	NDP5060L	NDB5060L	Units
VDSS	Drain-Source Voltage	60		V
VDGR	Drain-Gate Voltage (RGS 1 M)	60		V
VGSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs)	± 16		V
		± 25
ID	Drain Current - Continuous - Pulsed	26		A
		78
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	68		W
		0.45		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175

Description

These logic level N-Channel enhancement mode power field effect transistors NDB5060L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB5060L is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDB5060L
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	26A
Rds On (Max) @ Id, Vgs	35 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	840pF @ 30V
Power - Max	68W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	24nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDB5060L NDB5060L NDB5060LDKR ND NDB5060LDKRND NDB5060LDKR