NCP5355PDR2

Product :
Supply Current :
Maximum Power Dissipation :
Maximum Operating Temperature :
Supply Voltage - Max :
Mounting Style : SMD/SMT
Packaging : Reel
Supply Voltage - Min : - 0.3 V
Type : High Side/Low Side
Rise Time : 25 ns
Fall Time : 25 ns
Package / Case : SOIC-8 Exposed Pad


Features:

·  8.0 V - 14 V Gate Drive Capability
·  2.0 A Peak Drive Current
·  Rise and Fall Times < 15 ns Typical into 3300 pF
·  Propagation Delay from Inputs to Outputs < 30 ns
·  Adaptive Nonoverlap Time Optimized for Large Power MOSFETs
·  Floating Top Driver Accommodates Applications Up to 26 V
·  Undervoltage Lockout to Prevent Switching when the Input Voltage is Low
·  Thermal Shutdown Protection Against Overtemperature
·  TG to DRN Pull-Down Resistor Prevents HV Supply-Induced Turn-On of Top MOSFET
·  BG to PGND Pull-Down Resistor Prevents Transient Turn On of Bottom MOSFET
·  Internal Bootstrap Diode Reduces Parts Count and Total Solution Cost

Pinout




Specifications

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
1. 60 seconds maximum above 183°C.
2. Ratings applies when soldered to an appropriate thermal area on the PCB.

Description

The NCP5355 is a dual MOSFET gate driver optimized to drive the gates of both high- and low-side Power MOSFETs in a Synchronous Buck converter. The NCP5355 is an excellent companion to multiphase controllers that do not have integrated gate drivers, such as ON Semiconductor's  NCP5314  or  NCP5316.  This  architecture provides the power supply designer greater flexibility by being able to locate the gate drivers close to the MOSFETs.

Driving MOSFETs with a 12 V source as opposed to a 5.0 V can significantly reduce conduction losses. Optimized internal, adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs. The floating top driver design of  NCP5355  can accommodate MOSFET drain voltages as high as 26 V. Both gate outputs can be driven low by applying a low logic level to the Enable (EN) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection.

The NCP5355 has the same pinout as the NCP5351 5.0 V Gate Driver.