Features: • 8.0 V − 14 V Gate Drive Capability• 2.0 A Peak Drive Current• Rise and Fall Times < 15 ns Typical into 3300 pF• Propagation Delay from Inputs to Outputs < 30 ns• Adaptive Nonoverlap Time Optimized for Large Power MOSFETs• Floating Top Dri...
NCP5355: Features: • 8.0 V − 14 V Gate Drive Capability• 2.0 A Peak Drive Current• Rise and Fall Times < 15 ns Typical into 3300 pF• Propagation Delay from Inputs to Outputs ...
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Features: • 50 Vrms Output Noise Without Use of Bypass Capacitor• Low Dropout Voltage ...
Rating |
VALUE |
SYMBOL |
Operating Junction Temperature |
Internally Limited |
°C |
Package Thermal Resistance: SO− Junction−to−Case, RJC Junction−to−Ambient, RJA |
45 165 |
°C/W °C/W |
Storage Temperature Range, TS |
−65 to 150 |
°C |
Storage Temperature Range |
52
|
°C/W
|
Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1) |
230 peak
|
kV
|
MSL Rating |
1
|
-
|
The NCP5355 is a dual MOSFET gate driver optimized to drive the gates of both high− and low−side Power MOSFETs in a Synchronous Buck converter. The NCP5355 is an excellent companion to multiphase controllers that do not have integrated gate drivers, such as ON Semiconductor's NCP5314 or NCP5316. This architecture provides the power supply designer greater flexibility by being able to locate the gate drivers close to the MOSFETs.
Driving MOSFETs with a 12 V source as opposed to a 5.0 V can significantly reduce conduction losses. Optimized internal, adaptive nonoverlap circuitry of NCP5355 further reduces switching losses by preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate MOSFET drain voltages as high as 26 V. Both gate outputs can be driven low by applying a low logic level to the Enable (EN) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection. The NCP5355 has the same pinout as the NCP5351 5.0 V Gate Driver.