Features: · Anti Cross-Conduction Protection Circuitry· Floating Top Driver Accommodates Boost Voltages of up to 30 V· One Input Signal Controls Both the Upper and Lower Gate Outputs· Output Disable Control Turns Off Both MOSFETs· Complies with VRM 10.x Specifications· Undervoltage Lockout·Thermal...
NCP3418PDR2: Features: · Anti Cross-Conduction Protection Circuitry· Floating Top Driver Accommodates Boost Voltages of up to 30 V· One Input Signal Controls Both the Upper and Lower Gate Outputs· Output Disable...
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Voltage Detectors / Monitors 0.9V Detector w/Reset High
· Anti Cross-Conduction Protection Circuitry
· Floating Top Driver Accommodates Boost Voltages of up to 30 V
· One Input Signal Controls Both the Upper and Lower Gate Outputs
· Output Disable Control Turns Off Both MOSFETs
· Complies with VRM 10.x Specifications
· Undervoltage Lockout
· Thermal Shutdown
· Thermally Enhanced Package Available
Rating |
Value |
Unit |
Operating Ambient Temperature, TA |
0 to 85 |
|
Operating Junction Temperature, TJ (Note 1) |
0 to 150 |
|
Package Thermal Resistance: SO-8 Junction-to-Case, RJC Junction-to-Ambient, RJA(2-Layer Board) |
45 123 |
/W /W |
Package Thermal Resistance: SO-8 EP Junction-to-Ambient, RJA (Note 2) |
50 |
/W |
Storage Temperature Range, TS |
-65 to 150 |
|
Storage Temperature Range, TS |
-65 to 150 |
|
Lead Temperature Soldering (10 sec): Reflow (SMD styles only) Standard (Note 3) Lead Free (Note 4) |
240 peak 260 peak |
|
JEDEC Moisture Sensitivity Level SO-8 (240 peak profile) SO-8 (260 peak profile) SO-8 EP (240 peak profile) SO-8 EP (260 peak profile) |
1 1 1 3 |
- |
1. Internally limited by thermal shutdown, 150 min.
2. Rating applies when soldered to an appropriate thermal area on the PCB.
3. 60 - 180 seconds minimum above 183.
4. 60 - 180 seconds minimum above 237.
*The maximum package power dissipation must be observed.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
The NCP3418PDR2 are dual MOSFET gate drivers optimized to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 20 ns transition time.
With a wide operating voltage range of the NCP3418PDR2, high or low side MOSFET gate drive voltage can be optimized for the best efficiency. Internal, adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs.
The floating top driver design of the NCP3418PDR2 can accommodate VBST voltages as high as 30 V, with transient voltages as high as 35 V. Both gate outputs can be driven low by applying a low logic level to the Output Disable (OD) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection.
The NCP3418PDR2 is identical to the NCP3418 except that there is no internal charge pump diode.
The NCP3418 is pin-to-pin compatible with Analog Devices
ADP3418 with the following advantages:
· Faster Rise and Fall Times
· Internal Charge Pump Diode Reduces Cost and Parts Count
· Thermal Shutdown for System Protection
· Integrated OVP
· Internal Pulldown Resistor Suppresses Transient Turn On of Either MOSFET