Features: • Single Wide Power Supply Range 2.2 to 3.6 Volts• Very low standby current 2.0A at 3.0V (Typical)• Very low operating current1.5mA at 3.0V and 1s(Typical)• Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output En...
N08L083WC2C: Features: • Single Wide Power Supply Range 2.2 to 3.6 Volts• Very low standby current 2.0A at 3.0V (Typical)• Very low operating current1.5mA at 3.0V and 1s(Typical)• Simple ...
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DescriptionThe N08L163WC2C is an integrated memory device containing a 8 Mbit static random access...
Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative to VSS |
VIN,OUT |
0.3 to VCC+0.3 |
V |
Voltage on VCC Supply Relative to VSS |
VCC |
0.3 to 4.5 |
V |
Power Dissipation |
PD |
500 |
mW |
Storage Temperature |
TSTG |
65 to 150 |
|
Operating Temperature |
TA |
-40 to +85 |
|
Soldering Temperature and Time |
TSOLDER |
260oC, 10sec |
The N08L083WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 1,048,576 words by 8 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power.
The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N08L083WC2C is optimal for various applications where low-power is critical such as battery backup and hand-held devices.
The N08L083WC2C device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs