Features: • Single Wide Power Supply Range 2.2 to 3.6 Volts• Very low standby current 2.0µA at 3.0V (Typical)• Very low operating current 1.5mA at 3.0V and 1µs (Typical)• Simple memory control Single Chip Enable (CE) Byte control for independent byte operation O...
N04L163WC1C: Features: • Single Wide Power Supply Range 2.2 to 3.6 Volts• Very low standby current 2.0µA at 3.0V (Typical)• Very low operating current 1.5mA at 3.0V and 1µs (Typical...
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Features: • Single Wide Power Supply Range 2.3 to 3.6 Volts• Very low standby current ...
Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative to VSS |
VIN,OUT |
0.3 to VCC+0.3 |
V |
Voltage on VCC Supply Relative to VSS |
VCC |
0.3 to 4.5 |
V |
Power Dissipation |
PD |
500 |
mW |
Storage Temperature |
TSTG |
65 to 150 |
|
Operating Temperature |
TA |
-40 to +85 |
|
Soldering Temperature and Time |
TSOLDER |
260, 10sec |
The N04L163WC1C is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N04L163WC1C is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The N04L163WC1C can operate over a very wide temperature range of -40 to +85 and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs.