N04L163WC1A

Features:

• Single Wide Power Supply Range
  2.3 to 3.6 Volts
• Very low standby current
  4.0A at 3.0V (Typical)
• Very low operating current
   2.0mA at 3.0V and 1s (Typical)
• Very low Page Mode operating current
  0.8mA at 3.0V and 1s (Typical)
• Simple memory control
  Single Chip Enable (CE )
  Byte control for independent byte operation
  Output Enable (OE ) for memory expansion
• Low voltage data retention
  Vcc = 1.8V
• Very fast output enable access time
  25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package available


Pinout

  


Specifications

Item	Symbol	Rating	Unit
Voltage on any pin relative to VSS	V IN,OUT	0.3 to VCC+0.3	V
Voltage on VCC Supply Relative to VSS	VCC	0.3 to 4.5	V
Power Dissipation	PD	500	mW
Storage Temperature	TSTG	40 to 125
Operating Temperature	TA	-40 to +85
Soldering Temperature and Time	TSOLDER	260oC, 10sec

Description

The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE )control and output enable (OE ) to allow for easy memory expansion. Byte controls (UB and LB ) allow the upper and lower bytes to be accessed independently. The N04L163WC1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The N04L163WC1A can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs.