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M I E -824A4

Features: ` High radiant power and high radiant intesity` Peak wavelength p = 940 nm` Good spectral matching to si-photodetector` Radiant angle: 120°Specifications Parameter Maximum Rating Unit Power Dissipation 120 mW Peak Forward Curren 1 A ...

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SeekIC No. : 004403839 Detail

M I E -824A4: Features: ` High radiant power and high radiant intesity` Peak wavelength p = 940 nm` Good spectral matching to si-photodetector` Radiant angle: 120°Specifications Parameter Maximum...

M I E -824A4 Data Sheet

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Part Number:
M I E -824A4
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

` High radiant power and high radiant intesity
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
` Radiant angle: 120°


Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Curren
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MIE-824A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology. It is molded in water clear plastic package.


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