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M I D - 1 8H22

Features: ` Wide range of collector current` Lensed for high sensitivity` Low cost plastic package` Good spectral matching IRED (p=850nm) type.Specifications Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector ...

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SeekIC No. : 004403803 Detail

M I D - 1 8H22: Features: ` Wide range of collector current` Lensed for high sensitivity` Low cost plastic package` Good spectral matching IRED (p=850nm) type.Specifications Parameter Maximum Rating ...

M I D - 1 8H22 Data Sheet

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Part Number:
M I D - 1 8H22
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

` Wide range of collector current
` Lensed for high sensitivity
` Low cost plastic package
` Good spectral matching IRED (p=850nm) type.


Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The M I D - 1 8H22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package.The lensing effect of the package allows an acceptance view angle of 35° that is measured from the optical axis to the half power point.


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