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M I D -54A22

Features: · Wide range of collector current· Lensed for high sensitivity· Low cost plastic package· Standard T-1 3/4 (5mm) package.· Good spectral matching IRED (940nm) type.· Acceptance angle :40oSpecifications Parameter Maximum Rating Unit Power Dissipation 150 mW Coll...

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SeekIC No. : 004403816 Detail

M I D -54A22: Features: · Wide range of collector current· Lensed for high sensitivity· Low cost plastic package· Standard T-1 3/4 (5mm) package.· Good spectral matching IRED (940nm) type.· Acceptance angle :40oS...

M I D -54A22 Data Sheet

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Part Number:
M I D -54A22
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· Wide range of collector current
· Lensed for high sensitivity
· Low cost plastic package
· Standard T-1 3/4 (5mm) package.
· Good spectral matching IRED (940nm) type.
· Acceptance angle :40o


Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
150
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The M I D -54A22 is a NPN silicon phototransistor mounted in a lensed, special dark plastic package. The lensing effect of the package allows an acceptance view angle of 40o so that the product performs a high directional characteristic.


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