MX28F2100T

NOTICE:
Specifications contained within the following tables are subject to change.

The MX28F2100T is a 2-mega bit Flash memory organized as 256K bytes of 8 bits or 128K words of 16 bits switchable. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX28F2100T is packaged in 44-pin SOP and 48-pin TSOP(I). It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

The standard MX28F2100T offers access times as fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2100T has separate chip enable (CE) and output enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F2100T uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles.The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX28F2100T uses a 12.0V ± 7% VPP supply to perform the High Reliability Erase and auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process.Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.