MX28F1000P

Features: `131,072 bytes by 8-bit organization`Fast access time: 70ns(Vcc:5V±5%; CL:35pF) 90/120ns(Vcc:5V±10%; CL:100pF)`Low power consumption 50mA maximum active current 100uA maximum standby current`Programming and erasing voltage 12V ± 5%`Command register architectureByte Programming (15us typi...

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SeekIC No. : 004431686 Detail

MX28F1000P: Features: `131,072 bytes by 8-bit organization`Fast access time: 70ns(Vcc:5V±5%; CL:35pF) 90/120ns(Vcc:5V±10%; CL:100pF)`Low power consumption 50mA maximum active current 100uA maximum standby curre...

floor Price/Ceiling Price

Part Number:
MX28F1000P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

` 131,072 bytes by 8-bit organization
` Fast access time: 70ns(Vcc:5V±5%; CL:35pF)
                              90/120ns(Vcc:5V±10%; CL:100pF)
`Low power consumption
  50mA maximum active current
  100uA maximum standby current
` Programming and erasing voltage 12V ± 5%
` Command register architecture
  Byte Programming (15us typical)
  Auto chip erase 5 seconds typical
  (including preprogramming time)
  Block Erase
`Optimized high density blocked architecture
  Four 4-KB blocks



Pinout

  Connection Diagram


Specifications

RATING VALUE
Ambient Operating Temperature -40 to 85
Storage Temperature -65 to 125
Applied Input Voltage -0.5V to 7.0V
Applied Output Voltage -0.5V to 7.0V
VCC to Ground Potential -0.5V to 7.0V
A9 & VPP -0.5V to 13.5V



Description

The MX28F1000P is a 1-mega bit Flash memory organized as 128K bytes of 8 bits each. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F1000P is packaged in 32-pin PDIP, PLCC and TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

The standard MX28F1000P offers access times as fast as 70 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F1000P has separate chip enable (CE ) and output enable (OE)controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F1000P uses a command register to manage this functionality, while maintaining a standard 32-pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles.The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.The MX28F1000P uses a 12.0V ± 5% VPP supply to perform the Auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process.Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.



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