Features: • 262,144 bytes by 8-bit organization• Fast access time: 90/120 ns• Low power consumption 50mA maximum active current 100uA maximum standby current• Programming and erasing voltage 12V ± 5%• Command register architecture Byte Programming (15us typical) A...
MX28F2000T: Features: • 262,144 bytes by 8-bit organization• Fast access time: 90/120 ns• Low power consumption 50mA maximum active current 100uA maximum standby current• Programming a...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: `131,072 bytes by 8-bit organization`Fast access time: 70ns(Vcc:5V±5%; CL:35pF) 90/120ns...
Features: • 262,144 bytes by 8-bit organization• Fast access time: 70/90/120 ns•...
DescriptionThe MX28F2000PQC-12C4 is a 2-mega bit Flash memory organized as 256K bytes of 8 bits ea...
RATING |
VALUE |
Ambient Operating Temperature |
0oC to 70oC |
Storage Temperature |
-65oC to 125oC |
Applied Input Voltage |
-0.5V to 7.0V |
Applied Output Voltage |
-0.5V to 7.0V |
VCC to Ground Potential |
-0.5V to 7.0V |
A9&VPP |
-0.5V to 13.5V |
The MX28F2000T is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F2000T is packaged in 32-pin PDIP and PLCC . It is designed to be reprogrammed and erased insystem or in-standard EPROM programmers.
The standard MX28F2000T offers access times as fast as 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2000T has separate chip enable (CE) and output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F2000T uses a command register to manage this functionality, while maintaining a standard 32-pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX28F2000T uses a 12.0V ± 5% VPP supply to perform the Auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.