MX28F2000T

Features: • 262,144 bytes by 8-bit organization• Fast access time: 90/120 ns• Low power consumption 50mA maximum active current 100uA maximum standby current• Programming and erasing voltage 12V ± 5%• Command register architecture Byte Programming (15us typical) A...

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SeekIC No. : 004431689 Detail

MX28F2000T: Features: • 262,144 bytes by 8-bit organization• Fast access time: 90/120 ns• Low power consumption 50mA maximum active current 100uA maximum standby current• Programming a...

floor Price/Ceiling Price

Part Number:
MX28F2000T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• 262,144 bytes by 8-bit organization
• Fast access time: 90/120 ns
• Low power consumption
  50mA maximum active current
  100uA maximum standby current
• Programming and erasing voltage 12V ± 5%
• Command register architecture
  Byte Programming (15us typical)
  Auto chip erase 5 seconds typical (including preprogramming time)
  Block Erase
• Optimized high density blocked architecture
  Eight 4-KB blocks
  Fourteen 16-KB blocks
• Auto Erase (chip & block) and Auto Program
   DATA polling
  Toggle bit
• 10,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Advanced CMOS Flash memory technology
• Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts
• Package type:
  32-pin plastic DIP
  32-pin PLCC



Pinout

  Connection Diagram


Specifications

RATING
VALUE
Ambient Operating Temperature
0oC to 70oC
Storage Temperature
-65oC to 125oC
Applied Input Voltage
-0.5V to 7.0V
Applied Output Voltage
-0.5V to 7.0V
VCC to Ground Potential
-0.5V to 7.0V
A9&VPP
-0.5V to 13.5V



Description

The MX28F2000T is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F2000T is packaged in 32-pin PDIP and PLCC . It is designed to be reprogrammed and erased insystem or in-standard EPROM programmers.

The standard MX28F2000T offers access times as fast as 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2000T has separate chip enable (CE) and output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F2000T uses a command register to manage this functionality, while maintaining a standard 32-pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX28F2000T uses a 12.0V ± 5% VPP supply to perform the Auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.




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