MX28F2100B

The MX28F2100B is a 2-mega bit Flash memory or- ganized as 256K bytes of 8 bits or 128K words of 16 bits switchable. MXIC's Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory.  The MX28F2100B is packaged in 44-pin SOP and 48-pin TSOP(I).  It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

The standard MX28F2100B offers access times as fast as 70ns, allowing operation of high-speed microprocessors without wait states.  To eliminate bus contention, the MX28F2100B has separate chip enable (CE) and output enable (OE ) controls.

MXIC's Flash memories augment EPROM function-ality with in-circuit electrical erasure and programming.  The MX28F2100B uses a command register to manage this functionality.  The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory con-tents even after 10,000 erase and program cycles.The MXIC cell is designed to optimize the erase and programming mechanisms.  In addition, the combi-nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.  The MX28F2100B uses a 12.0V  ± 7% VPP supply to perform the High Reliability Erase and auto Program/
Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process.Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.