Features: · Suitable for short and medium pulse applications up to 500 ms/10%· Internal input and output prematching networks allow an easier design of circuits· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure provides high emitter efficiency· Gold m...
MX1011B430W: Features: · Suitable for short and medium pulse applications up to 500 ms/10%· Internal input and output prematching networks allow an easier design of circuits· Diffused emitter ballasting resistor...
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Features: · Suitable for short and medium pulse applications up to 100 ms pulse width, 10% duty fa...
Features: · Suitable for short and medium pulse applications up to 100 ms/10%· Internal input and ...
Intended for use in common base, class C, broadband, pulsed power amplifiers for TCAS applications in the 1030 to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within this band.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 65 | V |
VCEO | collector-emitter voltage | open base | - | 15 | V |
VCES | collector-emitter voltage | RBE = 0 | - | 65 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
ICM | collector current | tp 30 s; 1% | - | 35 | A |
Ptot | total power dissipation | tp 30 s; 1%;Tmb = 75 | - | 1200 | W |
Tstg | storage temperature | -65 | +200 | ||
Tj | operating junction temperature | - | 200 | ||
Tsld | soldering temperature | t 10 s; note 1 | - | 235 |
NPN silicon planar epitaxial microwave power transistor MX1011B430W in a SOT439A metal ceramic flange package with base connected to flange.