Position: Home  > All Categories> Integrated Circuits (ICs) > MX1011B430W

MX1011B430W

Features: · Suitable for short and medium pulse applications up to 500 ms/10%· Internal input and output prematching networks allow an easier design of circuits· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure provides high emitter efficiency· Gold m...

product image

MX1011B430W Picture
See larger image
SeekIC No. : 004431509 Detail

MX1011B430W: Features: · Suitable for short and medium pulse applications up to 500 ms/10%· Internal input and output prematching networks allow an easier design of circuits· Diffused emitter ballasting resistor...

MX1011B430W Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MX1011B430W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Suitable for short and medium pulse applications up to 500 ms/10%
· Internal input and output prematching networks allow an easier design of circuits
· Diffused emitter ballasting resistors improve ruggedness
· Interdigitated emitter-base structure provides high emitter efficiency
· Gold metallization with barrier realizes very stable characteristics and excellent lifetime
· Multicell geometry improves power sharing and reduces thermal resistance.


Application

Intended for use in common base, class C, broadband, pulsed power amplifiers for TCAS applications in the 1030 to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within this band.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 65 V
VCEO collector-emitter voltage open base - 15 V
VCES collector-emitter voltage RBE = 0 - 65 V
VEBO emitter-base voltage open collector - 3 V
ICM collector current tp 30 s; 1% - 35 A
Ptot total power dissipation tp 30 s; 1%;Tmb = 75 - 1200 W
Tstg storage temperature -65 +200
Tj operating junction temperature - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave power transistor MX1011B430W in a SOT439A metal ceramic flange package with base connected to flange.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Kits
IT243
UVSC-110-4E1
Memory Cards, Modules
WT32
VTL5C7
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
LED Products
LM24P20
KCG057QV1DB-G770
Tools
TCP202
G084SN05 V.3
View more