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MX1011B200Y

Features: · Suitable for short and medium pulse applications up to 100 ms pulse width, 10% duty factor· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure provides high emitter efficiency· Gold metallization with barrier realizes very stable characteris...

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SeekIC No. : 004431508 Detail

MX1011B200Y: Features: · Suitable for short and medium pulse applications up to 100 ms pulse width, 10% duty factor· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structur...

MX1011B200Y Data Sheet

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Part Number:
MX1011B200Y
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Suitable for short and medium pulse applications up to 100 ms pulse width, 10% duty factor
· Diffused emitter ballasting resistors improve ruggedness
· Interdigitated emitter-base structure provides high emitter efficiency
· Gold metallization with barrier realizes very stable characteristics and excellent lifetime
· Multicell geometry improves power sharing reduces thermal resistance
· Internal input and output prematching networks allow an easier design of circuits.


Application

Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty operation within the 1030 MHz to 1150 MHz bandwidth.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 65 V
VCES collector-emitter voltage RBE = 0 - 65 V
VCEO collector-emitter voltage open base - 15 V
VEBO emitter-base voltage open collector - 3 V
ICM peak collector current tp 10 s; 10% - 11.5 A
Ptot total power dissipation Tmb = 75 ;tp 10 s; 1%; - 515 W
Tstg storage temperature -65 +200
Tj junction temperature - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial microwave power transistor MX1011B200Y in a SOT439A metal ceramic flange package, with base connected to flange.




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