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MW6S010NR1

Transistors RF MOSFET Power HV6 900MHZ 10W TO270-2N

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SeekIC No. : 00219482 Detail

MW6S010NR1: Transistors RF MOSFET Power HV6 900MHZ 10W TO270-2N

MW6S010NR1 Data Sheet

floor Price/Ceiling Price

US $ 6.68~7.89 / Piece | Get Latest Price
Part Number:
MW6S010NR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~50
  • 50~100
  • Unit Price
  • $7.89
  • $7.58
  • $7.28
  • $6.68
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 68 V Continuous Drain Current : 125 mA
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 150 C
Package / Case : TO-270 Packaging : Reel    

Description

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 68 V
Continuous Drain Current : 125 mA
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Package / Case : TO-270


Features:

• Typical Two-Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ =
      125 mA, Pout = 10 Watts PEP
      Power Gain - 18 dB
      Drain Efficiency - 32%
      IMD - -37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW  Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200 Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.


Specifications

Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5. +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Total Device Dissipation @ TC = 25
Derate above 25
PD
61.4
0.35
W
W/
Storage Temperature Range
Tstg
-65 to +175
Operating Junction Temperature
TJ
200



Description

Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. MW6S010NR1 is suitable for analog and digital modulation and multicarrier amplifier applications.




Parameters:

Technical/Catalog InformationMW6S010NR1
VendorFreescale Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating125mA
Package / CaseTO-270-2
PackagingCut Tape (CT)
Drawing Number375; 1265-08; NR; 2
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MW6S010NR1
MW6S010NR1
MW6S010NR1CT ND
MW6S010NR1CTND
MW6S010NR1CT



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