Transistors RF MOSFET Power HV6 900MHZ 10W TO270-2N
MW6S010NR1: Transistors RF MOSFET Power HV6 900MHZ 10W TO270-2N
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 68 V | Continuous Drain Current : | 125 mA | ||
Gate-Source Breakdown Voltage : | - 0.5 V, + 12 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-270 | Packaging : | Reel |
Rating |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
-0.5. +68 |
Vdc |
Gate-Source Voltage |
VGS |
-0.5, +12 |
Vdc |
Total Device Dissipation @ TC = 25 Derate above 25 |
PD |
61.4 0.35 |
W W/ |
Storage Temperature Range |
Tstg |
-65 to +175 |
|
Operating Junction Temperature |
TJ |
200 |
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. MW6S010NR1 is suitable for analog and digital modulation and multicarrier amplifier applications.
Technical/Catalog Information | MW6S010NR1 |
Vendor | Freescale Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 28V |
Current Rating | 125mA |
Package / Case | TO-270-2 |
Packaging | Cut Tape (CT) |
Drawing Number | 375; 1265-08; NR; 2 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MW6S010NR1 MW6S010NR1 MW6S010NR1CT ND MW6S010NR1CTND MW6S010NR1CT |