MTV10N100E

Features:

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured Not Sheared
• Specifically Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm, 13inch/500 Unit Tape & Reel, Add RL Suffix to Part Number


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	1000	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	1000	Vdc
GatetoSource Voltage - Continuous	VGS	± 20	Vdc
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	10 6.2 30	Adc Apk
Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25 (1)	PD	250 2.0 3.57	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =10Apk, L = 10mH, RG = 25)	EAS	500	mJ
Thermal Resistance - Junction to Cas - Junction to Case - Junction to Ambient(1)	RJC RJA RJA	0.5 62.5 35	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer!fls Data for !orst Case! Condition !"The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves!"representin boundaries on device characteristics ! are given to facilitate !worst case! desig E¤CFET and Designers are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.


Description

The MTV10N100E D³PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower R_DS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTV10N100E also offers a drainto source diode with a fast recovery time. Designed for high voltage, high speed switching applications in surface mount PWM motor controls and both acdc and dcdc power supplies. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.