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MTP55N06Z

Specifications Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc GateSource Voltage- Continuous- NonRepetitive (tp10ms) VGSVGSM ±20±40 VdcVpk Drain - Continuous @ 25°C- Continuous @ 100°C- S...

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SeekIC No. : 004430845 Detail

MTP55N06Z: Specifications Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc GateSource Voltage- Continuous- NonRepe...

MTP55N06Z Data Sheet

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Part Number:
MTP55N06Z
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Specifications

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10ms)

VGS
VGSM

±20
±40


Vdc
Vpk

Drain - Continuous @ 25°C
- Continuous @ 100°C
- Single Pulse(tp10 s)
ID
ID
IDM
55
35.5
165

Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
113
0.91
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25)
EAS
454
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
1.1
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
°C



Description

The MTP55N06Z  is designed to withstand high energy in the avalanche mode and switch efficiently.The MTP55N06Z also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTP55N06Z specifications:
• Avalanche Energy Capability Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model.




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