MTP55N06

Features:

• Avalanche Energy Capability Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model.


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	60	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	60	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	±20 ± 40	Vdc Vpk
Drain Current - Continuous @TC= 25°C - Continuous @ TC=100°C - Single Pulse (tp 10 s)	ID ID IDM	55 35.5 165	Adc Apk
Total Power Dissipation@TC= 25°C Derate above 25°C	PD	113 0.91	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VDS =60Vdc,VGS = 10Vdc, PEAK IL =55Apk, L = 0.3mH, RG = 25)	EAS	454	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	1.1 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

This document contains information on a new product. Specifications and information herein are subject to change without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

The MTP55N06 is designed to withstand high energy in the avalanche mode and switch efficiently. This MTP55N06 also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.