MTP50N06VL Selling Leads, Price trend, MTP50N06VL DataSheet download, circuit diagram from SeekIC.com

Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFeatures Common to TMOS V and TMOS EFETS• Avalanche Energy Specified• IDSS and VDS(on) Spe...

See larger image

SeekIC No. : 004430841 Detail

MTP50N06VL: Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFe...

MTP50N06VL Data Sheet

Get Latest Price

Part Number:: MTP50N06VL
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

MTP50N06 evaluate
Features: • Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Tempera...
MTP50N06EL evaluate
Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable t...
MTP50N06V evaluate
MOSFET DISC BY MFG 2/02

Product Details

Description

Features:

New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low R_DS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET

Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	V_GSS	60	Vdc
DrainGate Voltage (R_GS = 1.0 M)	V_DGR	60	Vdc
GateSource Voltage - Continuous - NonRepetitive (tp10ms)	V_GS V_GSM	±15 ±20	Vdc Vpk
Drain - Continuous @ 25°C - Continuous @ 100°C - Single Pulse(t_p10 s)	I_D I_D I_DM	42 30 147	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	125 0.83	Watts W/°C
Operating and Storage Temperature Range	T_J,T_stg	55 to 175	°C
Single DraintoSource Avalanche Energy - Starting T_J = 25°C (V_DD = 25 Vdc, V_GS = 5 Vdc, PEAK I_L = 42 Apk, L = 0.3 mH, R_G = 25)	E_AS	265	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	1.2 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds	T_L	260	°C

Customers Who Bought This Item Also Bought

MTP50N06
US $$0.43 - 0.45 / Piece

Supply Ability:100000Week

View details
MTP50N06V
US $$0.33 - 0.50 / Piece

Supply Ability:1Day

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

MTP50N06VL

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Switches(5620)

Memory Cards, Modules(216)

Power Supplies - Board Mount(3035)

Prototyping Products(332)

Undefined Category(248)

Audio Products(940)