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MTP1N100E

Features: • Robust High Voltage Termination• Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications...

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MTP1N100E: Features: • Robust High Voltage Termination• Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterize...

MTP1N100E Data Sheet

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Part Number:
MTP1N100E
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
1000
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
1000
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
VPK
Drain Current
- Continuous
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
1.0
0.8
3.0
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
75
0.6
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =100 Vdc, VGS =10Vdc IL =3.0 Apk L =1.0mH, RG = 25
EAS
45
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
1.67
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

The MTP1N100E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTP1N100E also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP1N100E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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