MTP12P10

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 300 mOhms


Specifications

Parameter	Symbol	Value	Unit
DraintoSource Voltage	VDSS	100	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	100	Vdc
GateSource Voltage - Continuous - Nonrepetitive(tp 50 s)	VGS VGSM	±20 ±40	Vdc Vpk
Drain Current - Continuous Drain Current - Pulsed	ID IDM	12 28	Adc
Total Power Dissipation Derate above 25°C	PD	75 0.6	Watts W/°C
Operating and Storage Temperature Range	TJ,Tstg	65 to 150	°C

Description

The MTP12P10 is designed for medium voltage, high speed power switching applications such as switching regulators,converters, solenoid and relay drivers.• Silicon Gate for Fast Switching Speeds - Switching Times Specified at 100°C MTP12P10 specifications:
• Designer's Data - I_DSS, V_DS(on), V_GS(th) and SOA Specified at Elevated Temperature
• Rugged - SOA is Power Dissipation Limited
• SourcetoDrain Diode Characterized for Use With Inductive Loads