Features: • Designed to Eliminate the Need for External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode• Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fa...
MTP12N10E: Features: • Designed to Eliminate the Need for External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode• Commutating Safe Operating Area (CSOA) Specified for Use i...
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Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
100 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
GatetoSource Voltage - Continuous - Single Pulsed (tp 50 ms) |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
Drain Current - Continuous -Single Pulsed (tp 10 s) |
ID IDM |
12 30 |
Adc |
Total Power Dissipation @ TC= 25°C Derate above 25°C |
PD |
79 0.53 |
Watts W/°C |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
The MTP12N10E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP12N10E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.