Position: Home  > All Categories> Integrated Circuits (ICs) > MTP12N06

MTP12N06

Features: • ESD Protected• 4 kV Human Body Model• 400 V Machine Model• Avalanche Energy Capability• Internal SourceToDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche ModeSpecifications Rating Symbol V...

product image

MTP12N06 Picture
See larger image
SeekIC No. : 004430788 Detail

MTP12N06: Features: • ESD Protected• 4 kV Human Body Model• 400 V Machine Model• Avalanche Energy Capability• Internal SourceToDrain Diode Designed to Replace External Zener Tran...

MTP12N06 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MTP12N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• ESD Protected
• 4 kV Human Body Model
• 400 V Machine Model
• Avalanche Energy Capability
• Internal SourceToDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
60
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
±15
±20
Vdc
VPK
Drain Current
- Continuous
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
12
7.1
36
Adc

Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
45
0.36
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VGS =5.0Vdc IL =12 Apk L =1.0mH, RG = 25
EAS
72
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
2.78
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

The MTP12N06 is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a gatetosource zener diode designed for 4 kV ESD protection (human body model).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Switches
US32DMRJ
HBGQ22P-11ET
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Circuit Protection
A50QS75-4Y
F-17*77
Optical Inspection Equipment
AA924
A21K4B
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
View more