MTP10N60E7 Selling Leads, Price trend, MTP10N60E7 DataSheet download, circuit diagram from SeekIC.com

Features: New Features of TMOS 7• Ultra Low OnResistance Provides Higher Efficiency• Reduced Gate ChargeFeatures Common to TMOS 7 and TMOS EFETS• Avalanche Energy Specified• Diode Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Tempera...

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SeekIC No. : 004430787 Detail

MTP10N60E7: Features: New Features of TMOS 7• Ultra Low OnResistance Provides Higher Efficiency• Reduced Gate ChargeFeatures Common to TMOS 7 and TMOS EFETS• Avalanche Energy Specified• ...

MTP10N60E7 Data Sheet

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Part Number:: MTP10N60E7
Supply Ability:: 5000

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Upload time: 2024/11/26

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Features: • Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppre...

Product Details

Description

Features:

New Features of TMOS 7
• Ultra Low OnResistance Provides Higher Efficiency
• Reduced Gate Charge
Features Common to TMOS 7 and TMOS EFETS
• Avalanche Energy Specified
• Diode Characterized for Use in Bridge Circuits
• I_DSSand V_DS(on) Specified at Elevated Temperature

Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	V_GSS	600	Vdc
DrainGate Voltage (R_GS= 1.0 M)	V_DGR	600	Vdc
GateSource Voltage - Continuous - NonRepetitive (t_p10ms)	V_GS V_GSM	±20 ±30	Vdc Vpk
Drain - Continuous - Continuous @ 100°C - Single Pulse(t_p10 s)	I_D I_D I_DM	10 8.0 35	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	201 1.61	Watts W/°C
Operating and Storage Temperature Range	T_J,T_stg	55 to 150	°C
Single DraintoSource Avalanche Energy - Starting T_J = 25°C (V_DD= 100 V, V_GS= 10 Vdc, I_L = 10 A, L = 8 mH, R_G = 25)	E_AS	300	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	0.62 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260	°C

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