MT5C6408

Voltage on any Input or DQ Relative to Vss...........-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss....................-0.5V to +7.0V
Storage Temperature......................................-65°Cto +150°C
Power Dissipation....................................................................1W
Max Junction Temperature...............................................+175°C
Lead Temperature (soldering 10 seconds)......................+260°C
Short Circuit Output Current................................................50mA
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.

The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need for clocks or refreshing. These SRAM's have equal access and cycle times.

For flexibility in high-speed memory applications, Austin Semiconductor MT5C6408 offers dual chip enables (CE1\, CE2) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design.

Writing to these MT5C6408 is accomplished when write enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH. Reading is accomplished when WE\ and CE2 remain HIGH and CE1\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs achieve low standby power requirements.

These MT5C6408 operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.