MT5C2564

Features:

* High Speed:  15, 20, 25, 35, 45, 55, and 70
* Battery Backup: 2V data retention
* Low power standby
* High-performance, low-power, CMOS double-metal process
* Single +5V (+10%) Power Supply
* Easy memory expansion with CE\
* All inputs and outputs are TTL compatible


Pinout




Specifications

Voltage on Any Pin Relative to Vss..................................-0.5V to +7V
Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V
Storage Temperature......................................................-65 to +150
Power Dissipation..............................................................................1W
Short Circuit Output Current.........................................................50mA
Lead Temperature (soldering 10 seconds)....................................+260
Junction Temperature..................................................................+175


Description

The Austin Semiconductor SRAM family MT5C2564 employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications,Austin Semiconductor MT5C2564 offers chip enable (CE\) on all organizations.  This enhancement can place the outputs in High-Z for additional flexibility in system design.  The x4 configuration features common data input and output.

Writing to these MT5C2564 is accomplished when write enable (WE\) and CE\ inputs are both LOW.  Reading is accomplished when WE\ remains HIGH and CE\ goes LOW.  The device offers a reduced power standby mode when disabled.This allows system designs to achieve low standby power re-quirements.

These MT5C2564 operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.