MT4C4007J

The MT4C4007J is a kind of randomly accessed solid-state memory. The device contains 4,194,304 bits organized in a *4 configuration with optional SELF REFRESH. During READ or WRITE cycles each of the 4 memory bits (1 bit per DQ) is uniquely addressed through the 20 address bits, which are entered 10 bits (A0-A9) at a time. RAS latches the first 10 bits and CAS latches the latter 10 bits.

There are some features of MT4C4007J as follows: (1)JEDEC-standard pinout and packages; (2)high performance, CMOS silicon gate process; (3)single +5 V±10% power supply; (4)Extended Data-Out (EDO) PAGE MODE access cycle; (5)all inputs, outputs and clocks are TTL compatible; (6)1,024-cycle extended refresh distributed across 16ms or 128 ms; (7)refresh modes: RAS ONLY, CAS-BEFORE-RAS (CBR) and HIDDEN; optional extended and SELF REFRESH modes; (8)EDO PAGE MODE cycle times, 25-35 ns.

What comes next is about the absolute maximum ratings of MT4C4007J: (1)voltage on VCC relative to VSS: -1 to +7 V; (2)operating temperature, TA (ambient): 0 to +70; (3)storage temperature (plastic): -55 to +150; (4)power dissipation: 1 W; (5)short circuit output current: 50 mA. Then is about the electrical characteristics and recommended DC operating conditions (VCC=5 V±10%): (1)supply voltage, VCC: 4.5 V min and 5.5 V typ; (2)input high (logic 1) voltage, all inputs, VIH: 2.4 V min and VCC+1 V max; (3)input high (logic 0) voltage, all inputs, VIL: -1.0 V min and 0.8 V max; (4)input leakage current, any input 0 VVIN6.5 V (all other pins not under test=0 V), II: -2A min and 2A max; (5)input leakage current (Q is disabled; 0 VVIN5.5 V ), IOZ: -10A min and 10A max; (6)output high voltage (IOUT=-5 mA),VOH: 2.4 V min; (7)output low voltage (IOUT=4.2 mA),VOH: 0.4 V max.