MT49H32M9FM-2.5

The MT49H32M9FM-2.5 is designed as one kind of high-speed memory device that can be used in high bandwidth communication data storage, telecommun-ications, networking, and cache applications, etc.

Features of the MT49H32M9FM-2.5 are:(1)400 MHz DDR operation (800 Mb/s/pin data rate); (2)Organization; (3)8 Meg x 36, 16 Meg x 18, and 32 Meg x 9; (4)8 banks; (5)cyclic bank switching for maximum bandwidth; (6)Reduced cycle time (20ns at 400 MHz); (7)Nonmultiplexed addresses (address multiplexing; (8)option available); (9)SRAM-type interface; (10)programmable READ latency (RL), row cycle time, and burst sequence length; (11)balanced READ and WRITE latencies in order to optimize data bus utilization; (12)data mask for WRITE commands; (13)differential input clocks (CK, CK#); (14)differential input data clocks (DKx, DKx#); (15)on-chip DLL generates CK edge-aligned data and output data clock signals; (16)data valid signal (QVLD); (17)32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total each 32ms); (18)144-ball BGA package; (19)HSTL I/O (1.5V or 1.8V nominal); (20)25 to 60 matched impedance outputs; (21)2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O; (22)on-die termination (ODT) RTT.

The absolute maximum ratings of the MT49H32M9FM-2.5 can be summarized as:(1)storage temperature:-55 to +150 °C;(2)I/O voltage:-0.3V to VDDQ+0.3 V;(3)voltage on VEXT supply relative to Vss:-0.3 to +2.8 V;(4)voltage on VDD supply relative to Vss:-0.3 to +2.1 V;(5)voltage on VDDQ supply relative to Vss:-0.3 to +2.1 V;(6)junction temperature:110 °C. If you want to know more information such as the electrical characteristics about the MT49H32M9FM-2.5, please download the datasheet in www.seekic.com or www.chinaicmart.com .