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MSM5718B70

Features: • Rambus Interface: Over 500 MB/sec peak transfer rate per RDRAM Rambus Signaling Logic (RSL) interface Synchronous protocol for fast block-oriented transfers Direct connection to Rambus ASICs, MPUs, and Peripherals 15 active signals require just 32 total pins on the controller int...

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SeekIC No. : 004428909 Detail

MSM5718B70: Features: • Rambus Interface: Over 500 MB/sec peak transfer rate per RDRAM Rambus Signaling Logic (RSL) interface Synchronous protocol for fast block-oriented transfers Direct connection to Ra...

MSM5718B70 Data Sheet

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Part Number:
MSM5718B70
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Rambus Interface: Over 500 MB/sec peak transfer rate per RDRAM Rambus Signaling Logic (RSL) interface Synchronous protocol for fast block-oriented transfers Direct connection to Rambus ASICs, MPUs, and Peripherals 15 active signals require just 32 total pins on the controller interface (including power) 3.3 V operation Additional/multiple Rambus Channels provide an additional 500 MB/second band-width each
• Dual 2KByte sense amplifiers may be operated as caches for low latency access
• Random Access mode enables any burst order at full band width
• Features for graphics include random-access mode, write-per-bit and mask-per-bit operations
• Control and refresh logic entirely self-contained
• On-chip registers for flexible addressing and timing
• Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)


Pinout

Connection Diagram


Specifications

Symbol Parameter Min. Max. Unit
VI,ABS Voltage applied to any RSL pin with respect to Gnd 0.5 VDD,MAX+0.5 V
VI,TTL,ABS Voltage applied to any TTL pin with respect to Gnd 0.5 VDD+0.5 V
VDD,ABS Voltage on VDD with respect to Gnd 0.5 VDD,MAX+1.0 V
TJ,ABS Junction temperature under bias -55 125
TSTORE Storage temperature -55 125



Description

The 18-Megabit Rambus™ DRAM (RDRAM™) MSM5718B70 is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) technology makes transfer rates greater than 500 MHz achievable while using conventional system and board design methodologies. Lower effective latency of MSM5718B70 is attained by operating the dual 2KByte sense amplifiers as high speed caches, and by using random access mode to facilitate large block transfers.

RDRAMs MSM5718B70 are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance is required.




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