Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input : TTL compatible, low input capacitance· Output : TTL compatible, 3-state· Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version)· Fast page mode, read modify write capability· CAS before RAS refresh,...
MSM511000C: Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input : TTL compatible, low input capacitance· Output : TTL compatible, 3-state· Refresh : 512 cycles/8 ms,...
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Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
Features: · 1,048,576-word × 16-bit configuration· Single 5 V power supply, ±10% tolerance· Input ...
· 1,048,576-word × 1-bit configuration
· Single 5 V power supply, ±10% tolerance
· Input : TTL compatible, low input capacitance
· Output : TTL compatible, 3-state
· Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version)
· Fast page mode, read modify write capability
· CAS before RAS refresh, hidden refresh, RAS-only refresh capability
· Package options:
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM511000C/CL-xxJS)
20-pin 400 mil plastic ZIP (ZIP20-P-400-1.27) (Product : MSM511000C/CL-xxZS)
xx indicates speed rank.
Parameter |
Symbol |
Rating |
Unit |
Voltage on Any Pin Relative to VSS |
VT |
1.0 to 7.0 |
V |
Short Circuit Output Current |
IOS |
50 |
mA |
Power Dissipation |
PD* |
1 |
W |
Operating Temperature |
Topr |
0 to 70 |
|
Storage Temperature |
Tstg |
55 to 150 |
The MSM511000C/CL is a 1,048,576-word × 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM511000C/CL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMOS process. The MSM511000C/CL is available in a 26/20-pin plastic SOJ or 20-pin plastic ZIP. The MSM511000CL (the low-power version) is specially designed for lower-power applications.