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MSM56V16800E

Features: •Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell•2-bank *1,048,576-word *8-bit configuration•3.3 V power supply, ±0.3 V tolerance•Input: LVTTL compatible•Output: LVTTL compatible•Refresh: 4096 cycles/64 ms•Programmable data tra...

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SeekIC No. : 004428907 Detail

MSM56V16800E: Features: •Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell•2-bank *1,048,576-word *8-bit configuration•3.3 V power supply, ±0.3 V tolerance•Input: LVTTL co...

MSM56V16800E Data Sheet

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Part Number:
MSM56V16800E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
•2-bank *1,048,576-word *8-bit configuration
•3.3 V power supply, ±0.3 V tolerance
•Input: LVTTL compatible
•Output: LVTTL compatible
•Refresh: 4096 cycles/64 ms
•Programmable data transfer mode
  CAS  latency (1, 2, 3)
  Burst length (1, 2, 4, 8, full page)
  Data scramble (sequential, interleave)
•CBR auto-refresh, Self-refresh capability
•Package:
44-pin 400 mil plastic TSOP (Type II)(TSOPII44-P-400-0.80-K)  (Product : MSM56V16800E-xxTS-K)
                                                                                                  xx indicates speed rank.


Pinout

Connection Diagram

Connection Diagram




Specifications

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to VCC +0.5
V
VCC Supply Voltage
VCC, VCCQ
-0.5 to 4.5
V
Storage Temperature
Tstg
-55 to 125
°C
Power Dissipation
PD*
600
mW
Short Circuit Current
IOS
50
mA
Operating Temperature
Topr
0 to 70
°C

*: Ta = 25°C




Description

The MSM56V16800E is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.




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