Features: •Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell•2-bank*1,048,576-word*8-bit configuration•3.3 V power supply, ±0.3 V tolerance•Input: LVTTL compatible•Output: LVTTL compatible•Refresh: 4096 cycles/64 ms•Programmable data trans...
MSM56V16800DH: Features: •Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell•2-bank*1,048,576-word*8-bit configuration•3.3 V power supply, ±0.3 V tolerance•Input: LVTTL comp...
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Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input :...
Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
Parameter |
Symbol |
Rating |
Unit |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to VCC +0.5 |
V |
VCC Supply Voltage |
VCC, VCCQ |
-0.5 to 4.6 |
V |
Storage Temperature |
Tstg |
-55 to 150 |
°C |
Power Dissipation |
PD* |
600 |
mW |
Short Circuit Current |
IOS |
50 |
mA |
Operating Temperature |
Topr |
0 to 70 |
°C |
*: Ta = 25°C
The MSM56V16800DH is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.