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MSM56V16400D

Features: • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell• 2-bank * 2,097,152-word ´ 4-bit configuration• 3.3 V power supply, ±0.3 V tolerance• Input : LVTTL compatible• Output : LVTTL compatible• Refresh : 4096 cycles/64 ms• Pro...

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SeekIC No. : 004428903 Detail

MSM56V16400D: Features: • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell• 2-bank * 2,097,152-word ´ 4-bit configuration• 3.3 V power supply, ±0.3 V tolerance• Inp...

MSM56V16400D Data Sheet

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Part Number:
MSM56V16400D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 2-bank * 2,097,152-word ´ 4-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
  CAS latency (1, 2, 3)
  CAS latency (2, 3)*1
  Burst length (1, 2, 4, 8, full page)
  Burst length (1, 2, 4, 8)*1
  Data scramble (sequential, interleave)
   *1 : H version only.
• CBR auto-refresh, Self-refresh capability
• Package:
  44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16400D/DH-xxTS-K)
   xx indicates speed rank.


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN,VOUT
0.5 VCCto 0.5
V
VCC Supply Voltage
VCC,VCCQ
0.5 to 4.6
V
Power Dissipation
PD*
600
mW
Short Circuit Current
IOS
50
mA
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
55 to 150
°C
*: Ta = 25°C


Description

The MSM56V16400D/DH is a 2-bank × 2,097,152-word × 4-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.




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