Features: Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell2-bank *524,288-word *8bit configuration3.3V power supply ± 0.3V toleranceInput : LVTTL compatibleOutput : LVTTL compatibleRefresh: 4096 cycles/64 msProgrammable data transfer mode -CAS Latency (1,2,3) -Burst Length (1,2...
MSM56V16160F: Features: Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell2-bank *524,288-word *8bit configuration3.3V power supply ± 0.3V toleranceInput : LVTTL compatibleOutput : LVTTL compati...
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Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input :...
Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
Parameter |
Symbol |
Rating |
Unit |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to VCC +0.5 |
V |
VCC Supply Voltage |
VCC, VCCQ |
-0.5 to 4.6 |
V |
Storage Temperature |
Tstg |
-55 to 150 |
°C |
Power Dissipation |
PD* |
600 |
mW |
Short Circuit Current |
IOS |
50 |
mA |
Operating Temperature |
Topr |
0 to 70 |
°C |
*: Ta = 25°C
The MSM56V16160F is a 2-Bank *524,288-word * 16 bit Synchronous dynamic RAM, fabricated in OKI's CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.