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MSM548512L

Features: • Large capacity : 4-Mbit (524,288-word × 8 bits)• Fast access time : 80 ns max.• Low power : 200 mA max. (standby with Self-refresh)• Refresh free : Self refresh• Logic compatible : SRAM WE pin, no address multiplex• Single power supply : 5 V ±10%R...

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SeekIC No. : 004428884 Detail

MSM548512L: Features: • Large capacity : 4-Mbit (524,288-word × 8 bits)• Fast access time : 80 ns max.• Low power : 200 mA max. (standby with Self-refresh)• Refresh free : Self refresh&#...

MSM548512L Data Sheet

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Part Number:
MSM548512L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Large capacity : 4-Mbit (524,288-word × 8 bits)
• Fast access time : 80 ns max.
• Low power : 200 mA max. (standby with Self-refresh)
• Refresh free : Self refresh
• Logic compatible : SRAM WE pin, no address multiplex
• Single power supply : 5 V ±10%
• Refresh : 2048 cycle/32 ms auto-address refresh
• Package compatible : SRAM standard package
• Package options:
   32-pin 600 mil plastic DIP (DIP32-P-600-2.54) (Product : MSM548512L-xxRS)
   32-pin 525 mil plastic SOP (SOP32-P-525-1.27-K) (Product : MSM548512L-xxGS-K)
   xx indicates speed rank.


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Voltage on Any Pin from VSS *1
VT
1.0 to 7.0
V
Power Dissipation
PD
1.0
W
Operating Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
55 to 125
°C
Storage Temperature (biased)
Tbias
10 to 85
°C
Short Circuit Output Current
IOS
50
mA

*1 To VSS
Note: 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

The MSM548512L is fabricated using OKI's CMOS silicon gate process technology. This process,coupled with single-transister memory storage cells, permits maximum circuit density, minimum chip size and high speed.

MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh mode. In the Self-refresh mode the internal refresh timer and address counter refresh the dynamic memory cells automatically. This MSM548512L allows low power consumption when using standby mode with Self-refresh.

The MSM548512L also features a static RAM-like write function that writes the data into the memory cell at the rising edge of WE.




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