Features: • Single power supply: 5 V ±10%• Full TTL compatibility• Multiport organization RAM : 256K word × 8 bits SAM : 512 word× 8 bits• Extended page mode• Write per bit• Persistent write per bit• Masked flash write• Masked block write•RAS o...
MSM548263: Features: • Single power supply: 5 V ±10%• Full TTL compatibility• Multiport organization RAM : 256K word × 8 bits SAM : 512 word× 8 bits• Extended page mode• Write per...
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Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input :...
Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
Parameter |
Symbol |
Condition |
Rating |
Unit |
Input Output Voltage |
VT |
Ta = 25°C |
1.0 to 7.0 |
V |
Output Current |
IOS |
Ta = 25°C |
50 |
mA |
Power Dissipation |
PD |
Ta = 25°C |
1 |
W |
Operating Temperature |
Topr |
- |
0 to 70 |
°C |
Storage Temperature |
Tstg |
- |
55 to 150 |
°C |
The MSM548263 is a 2-Mbit CMOS multiport DRAM composed of a 262,144-word by 8-bit dynamic RAM, and a 512-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.
MSM548263 supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM548263 features block write, flash write functions and extended page mode on the RAM port and a split data transfer capability, programmable stops on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flip-flops.