MSM548128BL

*1 To V_SS
Note: 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability

The MSM548128BL is a 1-Mbit, high-speed and low power CMOS Pseudo Static RAM organized as 131,072-word × 8-bit.

The MSM548128BL is fabricated using silicon gate N well CMOS process. This process, coupled with single-transistor memory storage cells, permits maximum circuit density, minimum chip size, and high speed.

MSM548128BL has Self-refresh mode in addition to Address-refresh mode and Auto-refresh mode. In Self-refresh mode the internal refresh timer and address counter refresh the dynamic memory cells automatically. This series allows low power consumption when using standby mode with Self-refresh.

The MSM548128BL also features a static RAM-like write function that writes the data into the memory cell at the rising edge of WE.

The MSM548128BL is pin compatible with CMOS static RAM and 256K pseudo static RAM.