Features: • Single power supply: 5 V ±10%• Full TTL compatibility• Multiport organization RAM : 256K word × 16 bits SAM : 512 word × 16 bits• Extended page mode• Write per bit• Persistent write per bit• Byte write• Masked flash write• Masked bl...
MSM5416283: Features: • Single power supply: 5 V ±10%• Full TTL compatibility• Multiport organization RAM : 256K word × 16 bits SAM : 512 word × 16 bits• Extended page mode• Write ...
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Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input :...
Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
Parameter |
Symbol |
Condition |
Rating |
Unit |
Input Output Voltage |
VT |
Ta = 25°C |
1.0 to 7.0 |
V |
Output Current |
IOS |
Ta = 25°C |
50 |
mA |
Power Dissipation |
PD |
Ta = 25°C |
1 |
W |
Operating Temperature |
Topr |
- |
0 to 70 |
°C |
Storage Temperature |
Tstg |
- |
55 to 150 |
°C |
The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
MSM5416283 supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM5416283 features block write, flash write functions, extended page mode on the RAM port, a split data transfer capability, and programmable stops on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flip-flops.