Features: • Single power supply: 5 V ±10%• Full TTL compatibility• Multiport organization RAM : 256K word ×16 bits SAM : 512 word × 16 bits• Fast page mode•Write per bit• Byte read/write• Masked flash write• Masked block write (8 columns)•RAS o...
MSM5416272: Features: • Single power supply: 5 V ±10%• Full TTL compatibility• Multiport organization RAM : 256K word ×16 bits SAM : 512 word × 16 bits• Fast page mode•Write per bi...
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Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input :...
Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
Parameter |
Symbol |
Condition |
Rating |
Unit |
Input Output Voltage |
VT |
Ta = 25°C |
1.0 to 7.0 |
V |
Output Current |
IOS |
Ta = 25°C |
50 |
mA |
Power Dissipation |
PD |
Ta = 25°C |
1 |
W |
Operating Temperature |
Topr |
- |
0 to 70 |
°C |
Storage Temperature |
Tstg |
- |
55 to 150 |
°C |
The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
MSM5416272 supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM5416272 features block write and flash write functions on the RAM port, and a split data transfer capability on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flip-flops.