MSM52V1001LL

• 131,072-word x 8-bit configuration
• Power supply voltage: 2.7 V to 3.6 V
• Fully static operation
• Operating temperature range: T_a = 0°C to 70°C
• (Input/Output) LVCMOS compatible
• 3-state output
• Data retention available at power supply voltage 2 V
• Package options:
   - 32-pin 600 mil plastic DIP (DIP32-P-600-2.54) (Product : MSM52V1001LL-xxRS)
   - 32-pin 525 mil plastic SOP (SOP32-P-525-1.27-K) (Product : MSM52V1001LL-xxGS-K)
   - 32-pin plastic TSOP (Type I) (TSOPI32-P-820-0.50-K) (Product : MSM52V1001LL-xxTS-K) (TSOPI32-P-820-0.50-L) (Product : MSM52V1001LL-xxTS-L) xx indicates speed rank.

The MSM52V1001LL is a 131,072-word by 8-bit CMOS static RAM featuring 2.7 V to 3.6 V power supply operation and direct LVCMOS input/output compatibility. Since the circuitry is completely static, external clock and refreshing operations are unnecessary, making this device very easy to use. The MSM52V1001LL can be used in the high-speed operation of an access time 100 ns due to adopting a high-performance CMOS technology and in the very low current consumption of a standby current max. 20 mA when there is no chip selection. In addition, the MSM52V1001LL is the most suitable memory for microcomputer systems or data terminals because it is provided with a chip enable signal (CE1) suited to the expansion of a memory capacity, a chip enable signal (CE2) suited to a battery back-up, and an output enable signal (OE) suited to the I/O bus line control.