MSM521209

• 131,072-word x 9-bit configuration
• Single 3.3 V power supply
• Fully static operation
• Operating temperature range: T_a = 0°C to 70°C
• Power dissipation
  - Standby: 2 mA (Max.)
  - Operation:
     - 20 200 mA (Max.)
     - 25 180 mA (Max.)
     - 30 160 mA (Max.)
• Access time:
     - 20 20 ns (Max.)
     - 25 25 ns (Max.)
     - 30 30 ns (Max.)
• (Input/Output) LVTTL compatible
• Power-down function by chip enable signal
• 3-state output
• Package:
  - 36-pin 400 mil plastic SOJ (SOJ36-P-400-1.27) (Product : MSM521209-xxJS) xx indicates speed rank.

The MSM521209 is a 131,072-word by 9-bit CMOS fast static RAM featuring a single 3.3 V power supply operation and direct LVTTL input/output compatibility. Since the circuitry is completely static, external clock and refreshing operations are unnecessary, making this device very easy to use.

The MSM521209 can be used in the high-speed operation of an access time 20 ns due to adopting a high-performance CMOS technology. In addition, the MSM521209 is provided with a chip enable signal (CE) suited to the power-down function, and an output enable signal (OE) suited to the I/O bus line control.