DescriptionThe MSM51V18165A is a dynamic RAM fabricated in OKI's CMOS silicon gate technology. The feature of MSM51V18165A are as follows: (1)1048576-word*16-bit configuration; (2)single 3.3V power supply, ±0.3V tolerance; (3)input: LVTTL compatible, low input capacitance; (4)output: LVTTL compati...
MSM51V18165A: DescriptionThe MSM51V18165A is a dynamic RAM fabricated in OKI's CMOS silicon gate technology. The feature of MSM51V18165A are as follows: (1)1048576-word*16-bit configuration; (2)single 3.3V power ...
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Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input :...
Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
The MSM51V18165A is a dynamic RAM fabricated in OKI's CMOS silicon gate technology. The feature of MSM51V18165A are as follows: (1)1048576-word*16-bit configuration; (2)single 3.3V power supply, ±0.3V tolerance; (3)input: LVTTL compatible, low input capacitance; (4)output: LVTTL compatible, 3-state; (5)refresh: 1024 cycles/16ms; (6)fast page mode with EDO, read modify write capability; (7)CAS before RAS refresh, hidden refresh, RAS-only refresh capability.
The absolute maximum ratings of the MSM51V18165A are: (1)voltage on any pin relative to VSS: -0.5 to 4.6V; (2)short circuit output current: 50mA; (3)power dissipation: 1W; (4)operating temperature: 0 to 70; (5)storage temperature: -55 to 150.
The following is about the electrical characteristics of MSM51V18165A: (1)output high voltage: 2.4V min and VCC max at IOH=-2.0mA; (2)output low voltage: 0V min and 0.4V max at IOL=2.0mA; (3)input leakage current: -10A min and 10A max at 0VVIVCC+0.3V, all other pins not under test=0V; (4)output leakage current: -10A min and 10A max at DQ disable 0VVI3.6V; (5)average power supply current: 220mA max; (6)power supply current: 2mA max.