DescriptionThe MSM51V17400A is a kind of 4,194,304-word*4-bit CMOS dynamic random access memory fabricated in OKI's CMOS silicon gate technology. The device achieves high integration, high-speed operation, and low-power consumption due to quadruple polysilicon double metal CMOS. Thde device is ava...
MSM51V17400A: DescriptionThe MSM51V17400A is a kind of 4,194,304-word*4-bit CMOS dynamic random access memory fabricated in OKI's CMOS silicon gate technology. The device achieves high integration, high-speed ope...
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Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input :...
Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
The MSM51V17400A is a kind of 4,194,304-word*4-bit CMOS dynamic random access memory fabricated in OKI's CMOS silicon gate technology. The device achieves high integration, high-speed operation, and low-power consumption due to quadruple polysilicon double metal CMOS. Thde device is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP.
There are some features of MSM51V17400A as follows: (1)4,194,304-word*4-bit configuration; (2)single 3.3 V power supply, ±0.3 V tolerance; (3))input: LVTTL compatible, low input capacitance; (4)output: LVTTL compatible, 3-state; (5)refresh: 2048 cycles/32 ms; (6)CAS before RAS refresh, hidden refresh, RAS-only refresh capability; (7)multi-bit test mode capability; (10)fast page mode, read modify write capability.
What comes next is the absolute maximum ratings of MSM51V17400A: (1)voltage on any pin relative to VSS, VT: -0.5 to 4.6 V; (2)short circuit output current, IOS: 50 mA; (4)power dissipation, PD: 1 W; (5)operating temperature, Topr: 0 to 70; (6)storage temperature, Tstg: -55 to 150. Then is about the recommended operating conditions: (1)power supply voltage, VCC: 3.0 V min, 3.3 V typ and 3.6 V max; (2)power supply voltage, VSS: 0 V min, 0 V typ and 0 V max; (3)input high voltage, VIH: 2.0 V min and VCC+0.3 V max; (4)input low voltage, VIL: -0.3 V min and 0.8 V max. The last one is about the capacitance (Ta=25, f=1 MHz): (1)input capacitance (A0-A10), CIN1: 6 pF max; (2)input capacitance (RAS, CAS, WE, OE), CIN2: 7 pF max; (3)output capacitance (DQ1-DQ4), CI/O: 10 pF max.