DescriptionThe MSM51V17100 is a kind of new generation dynamic organized as 16,777,216-word*1-bit fabricated in OKI's CMOS silicon gate process technology. The device operates at a single 3.3 V power supply. Its I/O pins are LVTTL compatible. There are some features of MSM51V17100 as follows: (1)...
MSM51V17100: DescriptionThe MSM51V17100 is a kind of new generation dynamic organized as 16,777,216-word*1-bit fabricated in OKI's CMOS silicon gate process technology. The device operates at a single 3.3 V powe...
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Features: · 1,048,576-word × 1-bit configuration· Single 5 V power supply, ±10% tolerance· Input :...
Features: • 1,048,576-word ´ 16-bit configuration• Single 5 V power supply, ±10%...
The MSM51V17100 is a kind of new generation dynamic organized as 16,777,216-word*1-bit fabricated in OKI's CMOS silicon gate process technology. The device operates at a single 3.3 V power supply. Its I/O pins are LVTTL compatible.
There are some features of MSM51V17100 as follows: (1)silicon gate, quadruple polysilicon CMOS, 1 transistor memory cell; (2)16,777,216-word*1-bit configuration; (3)single 3.3 V power supply, ±10% tolerance; (4)input: LVTTL compatible; (5)output: LVTTL compatible, 3-state; (6)refresh: 2048 cycles/32 ms; (7)common I/O capability using "early-write" operation; (8)CAS before RAS refresh, hidden refresh, RAS-only refresh capability; (9)multi-bit test mode capability; (10)fast page mode, read modify write capability; (11)read modify write capability; (12)fast page mode capability.
What comes next is the absolute maximum ratings of MSM51V17100: (1)voltage on any pin relative to VSS, VT: -0.5 to 4.6 V; (2)short circuit output current, IOS: 50 mA; (4)power dissipation, PD: 1 W; (5)operating temperature, Topr: 0 to 70; (6)storage temperature, Tstg: -55 to 150. Then is about the recommended operating conditions: (1)power supply voltage, VCC: 3.0 V min, 3.3 V typ and 3.6 V max; (2)power supply voltage, VSS: 0 V min, 0 V typ and 0 V max; (3)input high voltage, VIH: 2.0 V min and VCC+0.3 V max; (4)input low voltage, VIL: -0.3 V min and 0.8 V max. The last one is about the capacitance (Ta=25, f=1 MHz): (1)input capacitance (A0-A11, DIN), CIN1: 6 pF max; (2)input capacitance (RAS, CAS, WE), CIN2: 7 pF max; (3)outcapacitance (DOUT), COUT: 7 pF max.